FEATURES. • Low profile package. • Ideal for automated placement. • Guardring for overvoltage protection. • Low power losses, high efficiency. 1N, 1N, 1N Vishay General Semiconductor. Revision: Aug 1. Document Number: For technical questions within. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic. Symbol. 1N 1N 1N Unit.
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Licensee is and shall be solely responsible and liable for any Modifications and for any Licensee Products, and for testing the Software, Modifications and Licensee Products, and for testing and implementation of the functionality of the Software and Modifications with the Licensee Products. Axial Lead Rectifiers Rev. The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon 1n817 diode.
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1N5817 SMD Diode Schottky
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PCS SS12 DOAC 1N SMD Schottky Barrier Diode NEW | eBay
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500 PCS SS12 DO-214AC 1N5817 SMD DIODE 1A SURFACE MOUNT SCHOTTKY
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